Hi Mamien,
the thermal expansion between steel and silicon is too different. Whenever
you cool down your substrates after bonding it can crack. The best is you
have a top and bottom heater, in this case the bond sample is like a
sandwich and head and cool simultaneously. But you should use different
material like SiC as bottom and top heater (thermal expansion similar to the
wafer) to avoid any damages.
You can also contact Mr. Glenn Walker  in Waterbury
Vermont. They build bonding machines since years and have a good experience
in this application or you contact me directly (address see food line) for
detailed information concerning to your material and bonding environment.

Best regards

//***************************************************************//
Suss MicroTec Lithography
Hell Erwin
Product Specialist
Bond Systems
Schleissheimerstr. 90
D-85748 Garching
Germany
Tel.:   +49 89 32007-307
Fax:    +49 89 32007-162
Cell:   +49 170 5386531
Email:  [email protected] 
Internet:www.suss.com 

------------------------------

Message: 2

>>> [email protected] 07/25/03 10:15 AM >>>

Hi All,

I've done some experiment about silicon to glass anodic bonding.
The bonding was performed at temperature 400 C and 600 V, however it's
followed by the increasing of the current, exceeding 10 mA and then I
found that my p-100 silicon and corning glass was cracked and broken,
but  the bonding is still occured. I use stainless plate and gold
needle probe to apply the voltage. The silicon wafer and
glass was cleaned using acetone cleaning.

Could someone help me explaining this ?
Every comment would be appreciated.

Best regards,

mamien

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