Dear colleagues
>From the publication of Ichiki et al. Thin Solid Films 435 (2003) 62-68
I learned that glas
etching with SF6 and Ar works quiet well. When we bought 4 years ago a
ICP system (STS)
for Si deep etching and a RIE system for glas (resp SiO2, Si3N4) etching
we were told from STS not to do
both processes in the same chamber because of reproducibility.
Does anyone has experience in running glas etch (SF6/Ar) and silicon
deep etching
on the same ICP system. Do I contaminate the si deep etching chamber by
glass etching
or is it possible to clean up the system without open it (no mechanical
clean)?
Thanks for response.
Greetings
Stefan
_____________________________________________________
Dr. Stefan Blunier
ETH Zuerich, Zentrum CLA G 21.2
Institute of Mechanical Systemes
Tannenstrasse 3
CH - 8092 Zuerich
Switzerland
Tel: +41 1 632 77 64
Fax: +41 1 632 11 45
e-mail: [email protected]
http://www.zfm.ethz.ch/d/mems/
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