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MEMSnet Home: MEMS-Talk: Re: Si3N4 Dry etch with good selectivity
Re: Si3N4 Dry etch with good selectivity
2003-07-30
Pavel Neuzil
Re: Si3N4 Dry etch with good selectivity
Pavel Neuzil
2003-07-30
Hi Jun
How about to try XeF2? It will etch SiN quite slowly
(but surely) with absolutely no effect on resist,
oxide, aluminum and few other materials. In case you
want to give a try, send me a sample and I will etch
it for you for free.
Pavel


From: "Jun Chen" 
Subject: [mems-talk] Si3N4 Dry etch with good
selectivity
Date: Tue, 29 Jul 2003 16:25:29 +0100
To: [email protected]



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Hi,

Any experte can give some suggestions about how to dry
etch
800-1000 A Si3N4(made by PECVD 330C) with good
selectivity
with photo-resist AZ4110 10000 A. We don't want to
etch many
resist,because it will kill the performance. We tried
SF6
(Unaxis system), it etched many resistor. Any
suggestions
will be appreciated.

Thanks a lot!

Jun Chen
Email: [email protected]
Phone: 510-651-6700x102





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