Am using a soldering iron at room temperature to place indium contacts onto Ga
As n type Si doped, Etch Pit density <10,000/cm2

Surface finish: front side mirror polished, back side lapped , etched.
Carrier Concentration : 0.5 to 2x1018/cm3

How can I achieve good ohmic contacts, because my technique is giving me a lot
of bad results.



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