Hi,

I'm looking for a possible alternative to IPA (isopropyl alcohol) in aqueous
KOH (wet) etching of Si.
To do this intelligently, however, I'd like to know a little more about
how/why IPA reduces undercutting
of exposed corners in Si(100) structures. Does anyone know of papers
describing other additives
(other than IPA) or papers that discuss the role of IPA in this process?

I appreciate any help or suggestions available.

Eric Snyder, Ph.D.
Alien Technology Corporation
18220 Butterfield Blvd.
Morgan Hill, CA  95037   USA
tel: 408.782.3993
fax: 408.778.2411
[email protected]