I have done a RIE process on a silicon wafer in a CHF3(80 sccm,3.8*10^-2 mbar)
plasma for 1 hour for my degree thesis.
I'm looking for a metod to remove the polymer film due to the process on the
surface. I have read that it is possible with an oxigen plasma RIE process but I
don't know what parameters to use.I'm also interested in a metod to clean the
RIE chamber, if it is necessary in this case.
Please, help me. Thanks.