Hello,

I am trying to isotropically etch grooves (20 um wide; 10-20 um deep) in Si
using an RIE. I am getting high reflected powers whenever I deviate from the
standard (anisotropic) Si etch recipe. Sometimes, the value starts off low
but then reaches 10% of the forward power, at which point the system cuts
off automatically. Would anyone have any information (or know where I can
get some information) on the main factors that affect the reflected power?

Any information would be useful.

Many thanks,

Michael

_________________________________________________________________
Express yourself with cool new emoticons http://www.msn.co.uk/specials/myemo