I guess the anisotropic program uses low pressure and high voltage. The
isotropic should use high pressure and lower voltage. However, high pressure
means pumping rate is higher now, you may have to increase flow rate,
otherwise there is not enough gas to maintain plasma. Anyway, try play those
parameters so you can get a stable plasma, shouldn't be difficult.
----- Original Message -----
From: "Michael L" 
To: 
Sent: Tuesday, January 06, 2004 7:59 AM
Subject: [mems-talk] RIE reflected power too high during Si etch


> Hello,
>
> I am trying to isotropically etch grooves (20 um wide; 10-20 um deep) in
Si
> using an RIE. I am getting high reflected powers whenever I deviate from
the
> standard (anisotropic) Si etch recipe. Sometimes, the value starts off low
> but then reaches 10% of the forward power, at which point the system cuts
> off automatically. Would anyone have any information (or know where I can
> get some information) on the main factors that affect the reflected power?
>
> Any information would be useful.
>
> Many thanks,
>
> Michael
>
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