I am ragularly using PECVD nitride deposited at 250 C. A typical recipe is
180 Sccm SiH4, 10 Sccm NH3 at 1000 mTorr pressure with 10 W RF power. This
recipe gives a thickness of around 0.2 um in 20 min in a Oxford plasmalab
chamber. For oxide you may exhange NH3 with 225 Sccm N2O.

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Isa Kiyat