Hi Mr. Singh,
 Need help in wet oxidation of silicon, we have two types of epi reactors one
uses 250 liters of hydrogen during the epi process at 1110 C, the other reactor
uses 150 liters of hydrogen at 1090 C, in the former case we can grow oxide by
boiling wafers in DI water for ten minutes, in the latter case we can not grow
oxide in boiling DI water.
I would like you or any one else in the univ. help me in this matter. THANKS.

Sincerely
Mobashar