Dear Colleagues,

I am attempting to thermally grow SiO2 on a layer of deposited (LPCVD) poly-
silicon and experiencing a growth rate much higher than that of single crystal
si. Further more, initial results suggest a non-linearity in the diffusion
factor with respect to the temperature. I am also concerned with potential
defects resulting from trenches grown between grain boundaries - seem to be
loosing conductance in electrodes fast. I do not have enough specimens to fully
caracterise this, can anybody help or point me in the direction of a useful
reference?

Thank you,

Igor Paprotny
microrobotics group
Dartmouth College