You can increase the pressure as long as you get stable plasma.


-----Original Message-----
From: Qing Yao [mailto:[email protected]]
Sent: Monday, April 12, 2004 10:33 AM
To: MEMS-talk
Subject: [mems-talk] recipe for isotropic dry etch of Si

Hi,


I need to do isotropic dry etch of Si using RIE system (to release a
Nickel
structure on Si substrate). I am thinking about using Sulfur
Hexafluoride
(SF6). However, I don't have a recipe for it.

If somebody has the information about the recipe (e.g., pressure, gas
flow,
RF power, etch rate...), would you please let me know? By the way, the
machine I am using is PlasmaLab Dual-Chamber RIE.

If I couldn't get a recipe, is the following one a good start point?
pressure: 100 mTorr
gas flow: 50 sccm
RF power: 50 W

Thanks!



Best Regards,


Qing Yao
___________________
M&IE @ UIUC