Hi Qing,

We have used a recipe very similar only with less pressure on a Plasmalab RIE

pressure: 50 mTorr
gas flow: 50 sccm
RF power: 50 W

This recipe does work but the uniformity was very poor.

--
Shane McColman
Research Professional
NanoFab, University of Alberta
W 1-028 ECERF Building
Edmonton AB, Canada, T6G 2V4


On April 12, 2004 08:32 am, Qing Yao wrote:
> Hi,
>
>
> I need to do isotropic dry etch of Si using RIE system (to release a Nickel
> structure on Si substrate). I am thinking about using Sulfur Hexafluoride
> (SF6). However, I don't have a recipe for it.
>
> If somebody has the information about the recipe (e.g., pressure, gas flow,
> RF power, etch rate...), would you please let me know? By the way, the
> machine I am using is PlasmaLab Dual-Chamber RIE.
>
> If I couldn't get a recipe, is the following one a good start point?
> pressure: 100 mTorr
> gas flow: 50 sccm
> RF power: 50 W
>
> Thanks!
>
>
>
> Best Regards,
>
>
> Qing Yao
> ___________________
> M&IE @ UIUC
>
>
> _______________________________________________
> [email protected] mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/