Dear members,

does anybody know something about the phenomenon that after
dry etching there are some bubbles in the resist (expecially in
the center of the Wafer)?

We etch SiO2 in a Alcatel ICP with a C4F8 and H2 process.

We tried to solve by increasing baking or by flood exposure after
developing. We did not achive a solution where we had no bubbles.

We use Arch Chemicals OiR 906-12 and OiR 906-17 and we have no
Hotplate.

Best regards,

Carsten Weber