Giovanni,
I cannot confirm, but HI(aq) may have a minimum effect on
passivated cmos devices.

This is because only Concentrated HI, in its gaseous form, has been used in
the past for research in dry etching polysilicon CMOS gate,
because of its lower self-bias compared with Cl2:
Cl >I (electro-activity).

philip lau


----- Original Message -----
From: "Giovanni Morelli" 
To: 
Sent: Friday, April 16, 2004 9:59 AM
Subject: [mems-talk] Iodidric acid question wet etching


> Dear All,
>
> can someone confirm me if a wet etching with HI 47% (Iodidric acid) is
> compatible with CMOS tecnology ??
> I have to perform particular cleaning procedure after this etching??
>
> Thanks in advance
>
> Giovanni Morelli
>
>
>
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