Good day all,

I am wondering if anyone can help me with the following question by perhaps
pointing me to the appropriate litterature:

I would like to etch vertical trenches in silicon substrates using wet etch
solutions such as KOH. To what angle with respect to the major flat do I need to
pattern my trenches in order to ensure that my sidewalls are vertical (i.e. 90
degrees)?

Your help is much appreciated!

I thank you in advance...

Best regards,

Nancy


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