Dongmei Li,

  We use high density plasma source of NLD for Polyimide and other organic
material etch. Usually, N2+H2 gas chemistry is very useful to achieve high etch
rate, surface smoothness and vertical angle. You may refer my colleague's paper,
Jpn.J.Appl.Phys.Vol.42(2003)pp.1441‐1444.

Good luck,
Wei Chen
[email protected]





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MEMS-talk Digest, Vol 20, Issue 4


                      2004/06/03 12:02
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Today's Topics:

   1. Polyimide etching (Dongmei Li)
   2. polysilicon electric and thermal properties (Victor)
   3. Re: Polyimide etching (Park, Daniel Sang-Won)
   4. RE: Gold clean chemistry (Rick Morrison)
   5. Pinholes in Oxide/Nitride (Campe, Steve)
   6. RE: Gold/photoresist etching problems (aasutosh dave)
   7. RE: HMDS onto SiO2 (Bill Moffat)

----- Message from Dongmei Li  on Wed, 2 Jun 2004
17:13:26 -0600 -----

      To: [email protected]

 Subject: [mems-talk] Polyimide
          etching



Dear All,

Does anybody out there know what is the best approach for polyimide etching?
What I need to etch is PI-2555 from DuPont and the coated PI-2555 layer is
about 1 micron.

I only have tried dry etching (RIE) with CF4:O2, which gave me a very slow
etching rate. FYI, the photoresist and developer I used are AZP4210 and
AZ400K, respectively.

Now I am about ready to try RIE again using just O2, but not quite sure how
much of a difference it's going to make in terms of etching rate. So, any
information regarding this will be helpful for me so that I don't have to
repeat somebody else's failure. :)

Thanks a bunch!

dongmei

Dongmei Li
Postdoctoral Fellow
University of Colorado
Department of Chemical and Biological Engineering
Campus Box 424
Boulder, CO 80309
303-492-8547 (office)