Hi MEMS Talkers.

I'm interested in finding an anisotropic etch for heavily
doped (i.e. >10^19/cm^3) p-type Si.  I am looking for the
same anisotropic etching one gets with KOH and EDP
(i.e. v-grooves or pyramid-shaped pits in Si <100>),
but I want to etch some highly B-doped material.

Because the V-groove geometry is important on my devices,
I'd really prefer to use a wet chemical etch, as opposed to
plasma etches (i.e. deep RIE)  to etch "windows" through a
thin (10 - 100 um)  highly B-Doped Si membrane.


Any suggestions?


Thanks,

Jed Ley