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News	MEMSnet Home: MEMS-Talk: Wet etching of silicon nitride? Wet etching of silicon nitride? 2004-09-23 Sampo Tuukkanen 2004-09-23 Kirt Williams 2004-09-24 roy lam 2004-09-23 Kasman , Elina Titanium oxide removal 2004-09-24 Balaji Lakshminarayanan 2004-09-24 Phillipe Tabada 2004-09-24 [email protected] Wet etching of silicon nitride? Kirt Williams 2004-09-23 I know of two etchants: Hot (~160 C) 85% phosphoric acid, and 49% hydrofluoric acid. Both require a mask other than photoresist, such as polycrystalline or amorphous silicon. See online papers for etch rates. --Kirt Williams ----- Original Message ----- From: "Sampo Tuukkanen" To: "MemsTalk" Sent: Thursday, September 23, 2004 8:11 AM Subject: [mems-talk] Wet etching of silicon nitride? > Hi, > > I would like to wet etch Si3N4 (LPCVD) to prevent the damages of silicon > surface during RIE. > BHF seems to be quite slow to that. > > > Best regards, > > Sampo Tuukkanen, NanoScience Center, Jyväskylä. > > _______________________________________________ > [email protected] mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.memsnet.org/ reply
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