Hallo,

my first question in MEMS- Talk is about Stress in thin films.
We deposit Si3N4 on Si-Wafer by LP-CVD. The thickness of the film is about
100nm. It is amorphous. In doing so, stress is produced, which we want to
measure. On one hand we already measure with Tencor Stress Analyser. On the
other hand we need a second method. There are only non-contact proceedings
considered. Do any other proceedings exist?

And the second question is, which experiences you have with PE-CVD. We want to
deposit on the tensile strength in the film of LP-CVD (described above) a second
film with compressive stress, using PE-CVD. These two films will achieve a
stressless deposit. But what about fequency, pressure, thickness of film and
stress? Which connection does between these parameters exist?

I would be very happy if you could provide further assistance!

sincerely yours
Katharina