Dear Lee,

If your Ni film fully encapsulated your PR patterns, you will not be able
to lift off by using any type of organic solvent because it won't reach
your PR. Make sure that your PR profile is suitable for lift off or not.

Yours sincerely,

Isaac Chan
University of Waterloo
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My experience is on a-Si:H TFT design and semiconductor processing:
http://resumes.hotjobs.com/iwchan2004/processengineer6yr
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On Mon, 10 Jan 2005, Li Wang wrote:

> Dear colleague,
>
> I tried to make Ni pattern with lift-off. I used AC for pretty long
> time (30 min, 100W, 20 mT). After I immersed the wafer into aceton,
> the PR can not be washed away even with Ultrasonic. The PR is
> obviously still there because I can see patterns on the PR layer. Can
> I use PR stripper instead of aceton? Is stripper compatible with Ni?
> I really appreciate if you can share you experience with me. Thank you
> very much for help in advance.
>
> Lee