We have a design idea which would require a high temperature source
(~1100 deg.C). We are deciding between highly doped (10^20) polysilicon
heaters or refractory(W, Ta) or other (Pt) metal heaters. The heater is
to be encased in SiO2 (sputtered) and we are concerned with the high TCE
differences between the metal and the SiO2. For this reason, we are
leaning towards the poly-heater approach, but if anyone in the community
would like to share some of there experience, it would be greatly
appreciated. Thanks.

Steve