Dear all,
     i want to deposite a Si3N4 film by reactive sputtering of a pure silicon
target in nitrogen-argon mixtures using a Leybold Z550 rf magnetron sputtering
system.To form stoichiometric Si3N4 films,could you give me some suggestions
about sputtering conditions such as Ar/N2 flow rate (in sccm) ratio,rf
sputtering power,total sputtering gas pressure? Thanks a lot.

     Best regards.


Feng Cui,
Shanghai Jiao Tong University,P.R China