Dear members of the MEMS community,

 I need deposite a layer of low stress Si3N4 on Si(100) substrate by LPCVD with
SiH4 and NH3 as precursors,but I wonder how to setup the condition such as
temperature,pressure,and the mass flow of SiH4 and NH3 respectively.

Any help will be appreciated.

thank you very much!

anodle