TiW/Au can be more useful in situations when the final film will be
subjected to high temperatures.  Cr more readily diffuses into Au
sometimes resulting in adhesion loss.  Temperatures above 350C can be
problematical for Cr/Au for this reason.  If you intend to electroplate
to a final Au thickness, you have to be careful when using TiW/Au.
Certain Au baths can penetrate the pinholes present in even 300nm
sputtered Au and cause blistering upon subsequent heat treatment.  The
most common TiW target material is 10 weight percent Ti.
Mike

-----Original Message-----

Is it true that TiW and Au film stack is a better choice than CrAu when it
comes to sputtering seed layers on ceramic substrate?  Also can anyone give
me a suggestion on what % of W I should use for the TiW target If I were
to use it as an adhesion layer between ceramic and Au.