A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Question with TiW Sputter Target
Question with TiW Sputter Target
2005-04-11
louis su
2005-04-12
[email protected]
2005-04-12
MT Klaus Beschorner
Question with TiW Sputter Target
MT Klaus Beschorner
2005-04-12
> Is it true that TiW and Au film stack is a better choice than CrAu when it
> comes to sputtering seed layers on ceramic substrate?  Also can anyone
> give me a suggestion on what % of W I should use for the TiW target If I
> were to use it as an adhesion layer between ceramic and Au.

TiW has several practical advantages over Cr, some of them only relevant to
the semiconductor industry. It combines good adhesion with diffusion
barrier properties. It's stress can be easily controlled by the deposition
pressure.
Typical Ti content in the target (there will be less in your film) is 7 to
15 weight%, 10% being the most common.

best regards
Klaus Beschorner
Metron Technology, European Applications Manager
Drosselweg 6,71120 Grafenau,Germany. Tel +49-7033-45683


reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Nano-Master, Inc.
Harrick Plasma, Inc.
Tanner EDA by Mentor Graphics
The Branford Group