I recently read an article describing a room temperature anodic bonding
process using an intermediate layer composed of a low melting temperature
glass. The article reference is:
Esashi, M., et. al. "Low-temperature Silicon-to-Silicon Anodic Bonding with
Intermediate Low Melting Point Glass", Sensors and Actuators, A21-A23
(1990), 931-934.

While the article is cited a few times, I have not found any additional
publications on the process.  Is anyone aware of additional research on this
process?
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Jonathan Coppeta, Ph.D.
Process Development Manager
MicroChips Inc.