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MEMSnet Home: MEMS-Talk: Adhesion for Al
Adhesion for Al
2005-04-14
ahajjiah
2005-04-14
Zhiyan Liu
2005-04-15
Joe Lonjin
Adhesion for Al
Joe Lonjin
2005-04-15
200A/sec is too high, this will cause a poor film, and with damage the
resist. At this rate the Al will spike into the base material. The
temperature will rise more rapidly as well. Our best Al depositions for
thermal or e-beam are 1-5A/sec with a good base pressure like 3x10-7 or
just get into the -7 region. Ebeam of Al is harder to control so do a
test run to ensure constant rate and that you do not overflow the
crucible. A steady rate and controlled sweep will help to avoid
problems, this may take a few runs to see what works best with your
e-gun/deposition controller.

Joe Lonjin
Penn State Nanofabrication Facility

-----Original Message-----
From: Andrew Xiang [mailto:[email protected]]
Subject: Re: [mems-talk] Adhesion for Al

That high? will it cause too much heat transferred to the PR and burn
the PR?

I don't know the temperature difference between 1A/s and 100A/s and
200A/s when you melt the Al.

reply
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