Hello, everybody,

We have a problem in deposition of N-type SiGe layer. We used LPCVD at 750
degree C but at this high temperature, it is quite non-uniform. The result is
that the thickness profile is quite non-uniform. So I am wondering whether we
can deposit N-type SiGe at a lower degree, say 670 degree C, using LPCVD. Or
does anybody have experience of depositing N-type SiGe using PECVD? And I would
also like to know its temperature using PECVD.
Thank you in advance.

Ziyang