Hi all,

I have a lift of recipe using a positive resist for Si wafers. I need to do the
same for GaAs wafers. I don't have any experience in processing GaAs wafers. I
was wondering if my recipe (exposure time, dev. time and etc) would change a lot
or would it still be the same. I'm going to experiment it anyways. Any inputs,
thoughts on this are much appreciated.

thanks,
krishna