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MEMSnet Home: MEMS-Talk: Problems with lift-off using S1813 photoresist
Problems with lift-off using S1813 photoresist
2005-08-23
ahajjiah
2005-08-23
William Lanford-Crick
2005-08-23
Steven McMaster
2005-08-23
William Lanford-Crick
2005-08-23
Bill Moffat
2005-08-23
Wilson, Thomas
2005-08-23
schahrazede mouaziz
2005-08-24
ANIRBAN CHAKRABORTY
Problems with lift-off using S1813 photoresist
Wilson, Thomas
2005-08-23
I will be trying next week for my lift-off work, the image reversal
process for aluminum (and other metallizations) as described by Meier et
al., "Fabrication of an all-refractory circuit using lift-off with
image-reversal photoresist", IEEE Transactions on Magnetics, Vol 27, No.
2, March 1991. I will be using AZ 5214-E and AZ Developer. The latter is
the only developer, so I'm told, that does NOT etch aluminum. I do know
that AZ 351 did etch my aluminum films undesirably on previous
processing steps, so I have to abandon that developer.

Good luck,

Thomas Wilson
Physics
Marshall University

----Original Message-----
From: William Lanford-Crick
Sent: Tuesday, August 23, 2005 11:13 AM
To: 'General MEMS discussion'
Subject: RE: [mems-talk] Problems with lift-off using S1813 photoresist

In my experience, MIF 319 etched aluminum very fast.  I used to use MIF
319
to remove LOR-5B after lifting off Al with Acetone (using bilayer).  It
etched the Al very rapidly.

-Bill
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