A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: High etch rate of silicon using Dry etching method
High etch rate of silicon using Dry etching method
2005-08-30
harshal rokade
2005-08-30
Brent Garber
Determining the polarity of very small voltages
2005-09-02
Roger Brennan
2005-08-30
JoyH Jonesq
High etch rate of silicon using Dry etching method
JoyH Jonesq
2005-08-30
gases required are copper oxide, manganus oxide ...
--- harshal rokade  wrote:

> Hi,
>
> We have STS's PC 320 RIE system. i am interested in
> knowing, is it posible to etch silicon using this
> system with very high etch rate may be around
> 20um/min. which gases will be reqiiured?
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
MEMStaff Inc.
Mentor Graphics Corporation
MEMS Technology Review
Tanner EDA by Mentor Graphics