I had deposited 550-600 nm aluminum by sputtering (on
nitride surface)
and did wire bonding (with sonic pulse).. worked
fine..

I am not sure how thin you can go..

kursad
sonicMEMS lab



> > From: "Kirt Williams"

> To: "General MEMS discussion"
> 
> Date: Mon, 21 Nov 2005 09:34:05 -0800
> Subject: Re: [mems-talk] Al wire-bond
>
> Lawrence--
> A typical aluminum thickness is 1 um. For
> high-current contacts, I've gone
> up to 3 um.
> I'm not sure how thin you can go. No adhesion layers
> is needed for Al to Si.
>     --Kirt Williams
>
> ----- Original Message -----
> From: "Lung-hao Hu" 
> To: 
> Sent: Saturday, November 19, 2005 8:59 PM
> Subject: [mems-talk] Al wire-bond
>
> > Right now I wanna order silicon wafer for
> wire-bonding.
> > I wonder that how thick is of Al enough to
> wire-bond and what the
> > adhesion layer of Al and its thickness are.