Hi,
I am trying to use AZ5214E to lift-off either 10nm Cr/ 300nm Au or 10nm Ti/300nm
Au.
Can anyone recommend a good process whether using a single layer resist or
bilayer resist?

I have read that e-beam evaporation of Ti burns off some of the resist.  Is this
true?

Also, I have tried using the technique that Maria Nordstrom used in her thesis,
ie soaking the single layer lift-off resist of AZ5214E in SU-8 developer (PGMEA)
overnight.  I have discovered that this technique lifts off 10nm Cr/300nm Au
with linewidths of 100um very well.  Is there another technique?

Mr. Jeffrey Mun Pun YUE
余文彬
Division of Bioengineering
E3A-07-02, Nanobioanalytics Lab
7 Engineering Drive 1
National University of Singapore
Singapore 117574
Tel: (65) 65166482, Fax: (65) 68723069
E-mail:  [email protected]