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MEMSnet Home: MEMS-Talk: RIE removal of S1818 photoresist
RIE removal of S1818 photoresist
2008-01-16
Curtis, Mark E.
2008-01-16
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RIE removal of S1818 photoresist
Curtis, Mark E.
2008-01-16
Hello all,

I’m using Shipley S1818 positive photoresist as a mask for wet-etching a 100 nm
thick film of chromium.  After using a wet chemical photoresist stripper there
remains some photoresist residue on the surface of the chromium.  I’ve attempt
to use a Trion RIE to remove the photoresist residue with the following etch
parameters:
Gases/Flow Rate (O2/50 sccm),
Pressure (500 mTorr),
RIE Power (25 W), ICP Power (500 W), and
Time (30 min).

To my surprise, I found that not only did it remove the photoresist but also the
chromium.  Does anyone know of a good photoresist removal recipe for RIE that
will not etch chromium.  I have previously tried a shorter etch time (~10 min)
but it did not completely remove the photoresist residue.



Mark E. Curtis
Graduate Assistant
Homer L. Dodge Dept. of Physics and Astronomy
University of Oklahoma, Norman, OK
Tel: 405-325-3961-ext 36550
reply
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