Dear all,

We are depositing silane (in a vacuum chamber + injection of a small
quantity of silane) on silicon substrates. The photoresist used for the
masking is AZ5214 (lift-off process).

When we want to etch the resist after depoition, we cannot and some bubles
appeared. One possible explanantion is that the photorsist reacts with the
silane, more precisely, the phenol, alcool or acid functions we can find
in the photoresist.

Have you an idea to avoid such a problem ? Or a photoresist (negative or
reversal) without these functions ?

Regards,

Alexandre BOE
Post-doctoral researcher

UCL - EMIC
Bat. Maxwell, b.207
Place du Levant, 3
B-1348 Louvain-la-neuve
Belgium

Tel. +32 10 478 106
Fax. +32 10 478 705
[email protected]