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MEMSnet Home: MEMS-Talk: Wet-chemical etching of Au without etching Al
Wet-chemical etching of Au without etching Al
2010-02-15
Lisa Gades
2010-02-16
Dave Lewis
2010-02-16
Andy Irvine
2010-02-16
Dave Lewis
2010-02-16
Kevin Paul Nichols
2010-02-16
David Roberts
2010-02-17
Lisa Gades
2010-02-17
David Springer
2010-02-19
Lisa Gades
Wet-chemical etching of Au without etching Al
David Springer
2010-02-17
Hi Lisa

How wedded are you to the Au. You could use other metals and etch them using
XeF2 gas.  Mo etches the fastest, W next, Ta, Ti under certain conditions. Could
you switch the Au for one of these metals?

David Springer
XACTIX, Inc.
2403 Sidney St.
Suite 300
Pittsburgh, PA 15203
Tel: 412 381 3195
Fax: 412 381 1136
Email: [email protected]



> Hi Everyone,

Thank you for your input!  To answer a few of your questions:

-Dave L:  We explored potassium cyanide, but we will not be allowed to
use it at our facility due to safety concerns.

-Andy:  A sputtering or dry etching process remains a possibility.

-Kevin:  We can't be flexible on the Al for the particular device that
we are making (the device itself is Al, and the Au is just a sacrificial
layer).  We tried Cr as the sacrificial layer over Al but found that
during/after ICP RIE, some sort of interaction happened between the Al
and the Cr which caused defects in the edges of the Al (possibly a
galvanic effect?).

-David R.:  Thank you for the suggestion of electrochemical etching in
sulfuric acid.  I will discuss this with my collaborators.

We found one paper (Su et al. 2008, Maximizing Selectivity During
Wet-Chemical Gold Etching) in which the authors experimented with
various compounds added to standard Au etchant.  They found that
citrates and phosphates may improve selectivity.  We are thinking of
trying this as well.

Thanks again for your suggestions!

Lisa
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