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MEMSnet Home: MEMS-Talk: photoresist peeled off during Ni e-beam deposition
photoresist peeled off during Ni e-beam deposition
2010-02-26
Wei Tang
2010-02-26
A.ALLOUCH
2010-02-28
basar bolukbas
2010-02-26
Wei Tang
2010-02-26
Johnson, Stafford
2010-03-01
A.ALLOUCH
2010-02-28
Wei Tang
2010-03-02
Wei Tang
photoresist peeled off during Ni e-beam deposition
Wei Tang
2010-02-28
Hi, Basar,

Thanks for the suggestion. It is interesting while somehow
contradiction to my intuition. I was going to try a slow rate (like
0.5A/s) because I think slow rate will allow the film more time for
stress relaxation during deposition. I am curious about why a fast
deposition rate can reduce the stress instead of a slow one?

Wei


> ---------- 已转发邮件 ----------
> From: basar bolukbas 
> To: mems litho 
> Date: Sun, 28 Feb 2010 14:18:44 +0200
> Subject: Re: [mems-talk] photoresist peeled off during Ni e-beam deposition
> Dear Wei,
>
> Did you try this deposition with a higher rate?
>
> For example you can try 5A/sec.
>
> I guess this will give you a better result. Otherwise i recommend increase
your deposition rate to 10A/sec.
>
> Best Regards.

--
Wei Tang
Department of Materials Science and Engineering, UCLA
Cell: 310-357-0158
Website: http://tangweipku.googlepages.com
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