Have you tried contacting FSI International? They published an article
("Anhydrous HF etch reduces processing steps for DRAM capacitors") in the
May 1998 issue of Solid State Technology. Apparently FSI makes equipment
for HF vapor etching.

Ben Costello
Berkeley MicroInstruments

PS. I can fax you a copy of the article if you like.


At 08:28 AM 10/15/98 -0700, you wrote:
>     Dear colleques,
>
>     We are currently looking for any company/university group, who have in
>     their possession a system for HF vapor phase etching of silicon oxide.
>
>     We would like to have some trials run (at cost) on samples of a new
>     sensor structure containing a phosporus-doped silicon oxide
>     sacrificial layer.
>
>     If anyone is interested, or has any advice on where to locate such a
>     system please feel free to contact me.
>
>
>     Michael Pedersen, Ph.D.
>     Research Engineer
>
>     Knowles Electronics Inc.
>     2800 West Golf Road
>     Rolling Meadows, IL 60008
>     USA
>
>     Phone: (847)-437-8090 x334
>     Fax: (847)-437-8144
>     e-mail: [email protected]
>
>
>