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About electrostatic actuation of Si membrane
2010-06-28
[email protected]
2010-06-28
Albert Henning
2010-06-29
antwi nimo
2010-06-29
Marc Reinig
2010-06-28
Robert MacDonald
2010-06-28
Ning Wu
2010-06-28
Gareth Jenkins
2010-06-29
yasser sabry
2010-06-29
Felix Lu
2010-06-29
Gareth Jenkins
About electrostatic actuation of Si membrane
yasser sabry
2010-06-29
Dear Gareth,

It is not calculated like that.

The breakdown voltage increases at the microscale (Paschen law)

I think up to 300 V (the value Joe chosen) there should be no breakdown.

Thanks,
Yasser Sabry


________________________________
From: Gareth Jenkins 
To: General MEMS discussion 
Sent: Mon, June 28, 2010 10:42:50 PM
Subject: Re: [mems-talk] About electrostatic actuation of Si membrane

I also have no experience of such setups but if you are dropping a
voltage across a 20micron air gap, given the breakdown voltage of air
is 30kV/cm, you'll only be able to apply 60V before breakdown.
Maybe you can try it in a vacuum?

Gareth

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