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MEMSnet Home: MEMS-Talk: Parasitic capacitance of an LCP-based inductor
Parasitic capacitance of an LCP-based inductor
2010-12-22
Christian Engel
2010-12-23
Ned Flanders
2010-12-28
Christian Engel
2010-12-28
Ned Flanders
Parasitic capacitance of an LCP-based inductor
Christian Engel
2010-12-22
Hello everybody,

I have build a square inductor with a size of about 1cm² with N=10.
Substrate is LCP with a structured Au-layer thereupon. This layer was
reinforced galvanically. The subsequent ohmic resistance of the inductance
is about 8...10Ohm. A very bad value I think and it shows, that the
metallization process doesn't work properly. However, the measured
inductivity complies with the expected value. The problem is, that I obtain
a very high parasitic capacitance (some 100 nF) that can be measured between
the two electrodes of the inductor. So it is impossible to use it any further.

Is it conceivable that the ohmic resistance generates potential-differences
between the windings of the inductor and a lot of parallel capacitances are
formed? Does anybody know an analytical description for this effect?

Thanks a lot,

Chris
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