Hello,
My name is Robert, and i'm working in MEMS estructure fabrication.
In the process im working, i depositated a copper seed layer in a silicon
substrate, then using lytography process i defined the structure form, and
finally grown copper by electrodeposition process. Then the copper seed layer is
removed, however this part of the process (the copper seed layer removal) didn't
show positive results (surface roughness).
The copper layer removal process consist in:
-Sample Oxidation in NH4OH/H2O/H2O2(100/1/1) solution for 2 min.
-Then the oxide is removed by putting it in acetic acid, resulting in a rough
copper layer.
I would like to know, if i'm doing the copper seed layer removal process right,
and if anyone knows an alternative process.
Thanks
Robert
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