Dear MEMS Group,

we used the RIE process for etching SiN and achieved with a SF6 flow of
100sccm, a pressure of 200mT and a RF-Power of 50W a etchrate of approximately
1000A/min.

Does anyone used this process and obtained a significantly lower etchrate
(maybe 100A/min) with a uniform surface? Which parameters did you use?

Thank you very much for your help,

Michael Traxler and Matthias Meyer
Graduate Students
University of Washington
Department of Physics