Question for Discussion group:

Subject: SU-8 50 Patterning

I recently bought SU-8 50 resist and I tried to
pattern the resist with the following parameter:

Sample: Si wafer, about 2cm x 2cm

Dehydration Bake 1h, 230°C

Spinning: 700rpm 5s
          2000rmp 35s

10min sheet relaxation

pre bake 2min 50°C  Hotplate
         30min 90°C Hotplate

Exposure: 9, 12, 15, 17, 19s (5 samples), 23mW/cm^2

post-bake 50°C 2min
          95°C 5min slow cool down (2h)

developing: 10min

After developing the resolution was bad and there
were a lot of rifts on the resist surface. Can anyone help me with
optimized parameters to achieve sheet thicknesses of
approx. 100um and 50...60um with SU-8 50 ?!

Thank anyone very much in advance.

Mario