Mario,

The processing parameters you have stated are different from those which we
at Electronic Visions typically recommend.  I have found that longer
pre-exposure-bake times followed by a shorter post-exposure-bake are
preferable.  In addition to provide adequate stress-relief a
post-exposure-bake with a slow ramp down to room temperature is advised.  In
relation to your SU-8 processing question, Electronic Visions has developed
processing parameters optimized for automated production.  The processing
notes detail useful starting parameters for all SU-8 grades.  For a copy
please contact mailto:[email protected] 

Please feel free to contact me further on this subject.

Regards,
Loren St. Clair
Staff Engineer, Electronic Visions Inc.

Phone:  (602) - 437 - 9492 x 121
Fax:    (602) - 437 - 9435
Email:  mailto:[email protected] 
Web:    www.elvisions.com 

Time:   Thursday, September 09, 1999 at 1:44 PM
============================================================
        >>> Mario Adamschik  > 08/31 3:02 AM >>>
Question for Discussion group:
Subject:        SU-8 50 Patterning

I recently bought SU-8 50 resist and I tried to pattern the resist with the
following parameter:
Sample: Si wafer, about 2cm x 2cm
Dehydration Bake 1h, 2300C
Spinning: 700rpm 5s
        2000rmp 35s
10min sheet relaxation
pre bake 2min 500C  Hotplate
        30min 900C Hotplate
Exposure: 9, 12, 15, 17, 19s (5 samples), 23mW/cm^2
post-bake 500C 2min
        950C 5min slow cool down (2h)
developing: 10min
After developing the resolution was bad and there were a lot of rifts on the
resist surface. Can anyone help me with optimized parameters to achieve
sheet thicknesses of approx. 100um and 50...60um with SU-8 50 ?!
Thank anyone very much in advance.
Mario