My friends
About bonding I've some references:
[1] J. Haisma ....
Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations
Japanese Journal of Applied Physics
vol. 28, No. 8, pp. 1426-1443, August 1989
[2] R. Stengi ...
Bubble-Free-Silicon Wafer Bonding in a Non-Cleanroom Environment
Japanese Journal of Applied Physics
vol. 27, No. 12, pp. 2364-2366, December 1988
[3] J. G. Fleming ....
Low Temperature, High Strength, Wafer-toWafer Bonding
J. Electrochem. Soc.
vol. 139, No. 11, pp. 3300-3302, November 1992
[4] Masatada Horiuchi ......
Characteristics of Silicon Wafer-Bond Strengthening by Annealing
J. Electrochem. Soc.
vol. 139, No. 9, pp. 2589-2594, September 1992
[5]Sun Jin Yun ....
Studies on Microvoids at the Interface of Direct Bonded Silicon Wafer
J. Electrochem. Soc.
vol. 139, No. 8, pp. 2326-2330, August 1992
[6] Olof Engstrom ....
Electrical Characterization of Bonding Interfaces
J. Electrochem. Soc.
vol. 139, No. 12, pp. 3638-3644, December 1992
[7] A. D. Brooks ....
Low-Temperature Electrostatic Silicon-to-Silicon Seals Using Spittered
Borosilicate Glass
J. Electrochem. Soc.
vol. 119, No. 4, pp. 545-546, April 1972
Good luck
F. Sandoval-Ibarra
CINVESTAV-Guadalajara
Mixico
Brubaker Chad wrote:
> Dear Frank,
>
> Wow!! This is a tremendously broad question. An overview of wafer bonding
> techniques, along with which materials can be bonded?
>
> Actually, the second question is easier. Technically, anything can be
> bonded to anything (or nearly so). However, as you mentioned, the method
is
> important.
>
> First and foremost, your biggest issue with wafer bonding is the Thermal
> Coefficient of Expansion (TCE) for each material. Once two differing
> materials are bonded together, any change of temperature can cause a stress
> gradient, as one of the materials expands more rapidly than the other.
>
> That said, there are three basic bonding processes:
>
> 1) Anodic Bonding - this is the use of electricity in combination with
> elevated temperatures to perform a bond between an ion bearing glass and an
> oxidizable metal.
>
> 2) Thermocompression Bonding - Bonding using an intermediate layer, along
> with a combination of heat and pressure, to create a bond between two
> substrates.
>
> 3) Direct bonding - bonding of two extremely smooth surfaces directly,
> without use of intermediate layer or electricity. This will typicaly
> require a high temperature anneal after bonding.
>
> A good overview paper would be A.R. Mirza and A. A. Ayon. "Silicon Wafer
> Bonding: Key to MEMS High-Volume Manufacturing", Sensors, Vol. 15, no. 12
> 1998.
>
> As to manufacturers for bonding equipment, EV Group has been manufacturing
> bonding equipment for over ten years, and has extensive experience in the
> field. Please visit our web site at www.evgroup.com.
>
> Best Regards,
>
> Chad Brubaker
>
> EV Group-Technology, Tel: (602) 437 9492 x 119, Fax: (602) 437 9435
> E-mail: [email protected], Web: www.EVGroup.com, 03/07/02
>
> -----Original Message-----
> From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:[email protected]]
> Sent: Thursday, March 07, 2002 2:53 AM
> To: '[email protected]'
> Subject: [mems-talk] Wafer Bonding Information?
>
> Dear fellow MEMS researchers,
>
> I would like to get an overview of wafer bonding techniques.
> I am especially interested to know which materials can be bonded
> together by which bonding techniques and what advantages and dis-
> advantages there are. Also, which equipment manufacturers there
> are. I would be grateful if somebody can point me to good sources
> of information or literature.
>
> Thanks and have a nice day,
> Frank Berauer
> Senior R&D Engineer
> Hewlett-Packard Singapore
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