Try the Cookson web site.  They make a line of products for bonding wafers
to substrates.  This is widely used for III-V wafer processing.  The general
technology uses a sheet of PVA (polyvinyl acetate) as the bonding agent.  A
simple bench tool is used to provide heat and pressure to create the bond.
Dynatex sells an inexpensive bonding tool for the application (I visited
them a few weeks ago for a demonstration). The PVA can have fillers (Ag or
carbon) to make it electrically active.

This should give you a direction to explore.

Cheers,

mark rousey-seidel

-----Original Message-----
From: Karen Smith [mailto:[email protected]]
Sent: Wednesday, March 13, 2002 10:00 AM
To: [email protected]
Subject: [mems-talk] Conductive bonding techniques in silicon


I am looking assistance in finding techniques to join a silcion wafer
(n-type) via an electrically conductive bond to a conducting handle wafer
(preferably silicon). The issue is further complicated by the need to free
the silcion device wafer later in the process, for the bond to be HF
resitant and to not represent a contamination risk in a CMOS fab.

Anodic bonding, fusion bonding and Si-Au eutectic bonding are thus not
appropriate.

Can anyone help me by suggesting possible avenues for me to investigate
further, such as suitable metal eutectic/conductive adhesive/conductive
polymer/solder layers? Details of companies already offering (or planning to

offer) such services would also be gratefully received.

Many thanks in advance for you assistance,

Yours sincerely,

Karen Smith
Microsystems Consultant
Coventry, UK

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