If you are using Shipley Resists try 1165 remover at 60c, you generally
use a 2 bath operation, also after the RIE etch try a little oxygen
plasma before breaking vacuum this may help break up the skin that
develops in the RIE etch step.

Rick Morrison

Mike Tippetts wrote:

>I am currently trying to commision a TePla 300 Plasma processor for the use
>in removing photoresist from devices after RIE but I am left with small
>residues which are impossible to remove. What are the best resist removal
>conditions and how can the temperature be kept as low as possible? Also is
>there any way to strip resist from chrome without removing the chrome as
>well.
>
>Mike Tippetts
>_______________________________________________
>[email protected] mailing list: to unsubscribe or change your list
>options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing services.
>Visit us at http://www.mems-exchange.org/