Mike,
     With all plasma devices you introduce heat as the plasma gas is hot.  If
the design of the plasma reactor is inefficient the heat generated goes up.
It is quite possible the increasing heat is baking the resist before the
Oxygen plasma can remove it.  Try tests where you plasma clean for a fraction
of the usual time, then introduce nitrogen back to atmosphere to cool the
substrate.  If this approach obviously multiplied by the number of plasma
cycles gets the resist off, you have a temperature problem.  Bill Moffat

-----Original Message-----
From: Mike Tippetts [mailto:[email protected]]
Sent: Tuesday, March 26, 2002 6:52 AM
To: '[email protected]'
Subject: [mems-talk] Plasma ashing


I am currently trying to commision a TePla 300 Plasma processor for the use
in removing photoresist from devices after RIE but I am left with small
residues which are impossible to remove. What are the best resist removal
conditions and how can the temperature be kept as low as possible? Also is
there any way to strip resist from chrome without removing the chrome as
well.

Mike Tippetts
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