Hi,
I am trying to use sidewall inhibition etch to get deep trench. But for
some unknown reason, the polymer generated to protect the side wall peeled
off during the process.
What I did is to generate polymer using H2 and CF4, and then etch the
polymer with high energy and low pressure. Because I am using Cr as the
mask, I use same condition (high energy and low pressure) to etch silicon
so that I can get relatively fast etching speed and reduce the loop
number. But the polymer always peel off during the process, which never
happen when I use low energy high pressure as the recipe for silicon
etching.
How to hold on the polymer? Any suggestion will be really appreciated.

Peng Yao
DOEs lab
Electrical Engineering Dept.
Univeristy of delaware
Newark D.E 19716